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參數資料
| 型號： | PBYR325CTD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 1.5 A, 25 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 48K |
| 代理商： | PBYR325CTD |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR325CTD series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 20 V/ 25 V
I
O(AV)
= 3 A
V
F
≤
0.4 V
GENERAL DESCRIPTION
PINNING
SOT428
Dual
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
schottky
rectifier
diodes
PIN
DESCRIPTION
1
anode 1
2
cathode
1
The
supplied in the SOT428 surface
mounting package.
PBYR325CTD
series
is
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR3
20CTD
20
25CTD
25
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
20
25
V
V
R
I
O(AV)
T
mb
≤
125 C
square wave;
δ
= 0.5; T
mb
≤
144 C
-
-
20
25
V
A
3
I
FRM
square wave;
δ
= 0.5; T
mb
≤
144 C
-
3
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
55
60
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
a1
1
a2
3
2
1
2
3
tab
1
it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000
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