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參數資料
| 型號： | PBYR640CT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MINI CAT5 EXTENDER WALL-PLATE TRANSMITTER |
| 中文描述： | 5 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 33K |
| 代理商： | PBYR640CT |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR645CT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
D = 1.0
0.5
0.2
0.1
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
D =
t
p
t
p
T
T
t
I
145
140
135
130
125
120
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR645CT
50 C
75 C
100 C
Tj = 25 C
125 C
0
1
2
3
4
5
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
150
145
140
135
130
125
Tmb(max) / C
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR645CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
BYV118
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR645CT
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
May 1998
3
Rev 1.200
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