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參數資料
| 型號： | PBYR7025WT-25 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Rectifier diodes Schottky barrier(肖特基勢壘整流二極管) |
| 中文描述： | 肖特基整流二極管（肖特基勢壘整流二極管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 52K |
| 代理商： | PBYR7025WT-25 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR7025WT series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 20 V / 25 V
I
O(AV)
= 70 A
V
F
≤
0.46 V
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode schottky
rectifier
diodes
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
in
a
plastic
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
The
suppliedin the conventionalleaded
SOT429 (TO247) package.
PBYR7025WT
series
is
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-20
20
20
20
-25
25
25
25
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current, per diode
-
-
-
-
V
V
V
A
T
mb
≤
116 C
square wave;
δ
= 0.5;
T
≤
114 C
70
I
FRM
-
70
A
T
≤
114 C
t = 10 ms
t = 8.3 ms
sinusoidal T
= 125 C prior
to surge; with reapplied
V
I
FSM
-
-
500
550
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
2
A
I
RSM
t
p
= 100
μ
s
-
2
A
T
stg
T
j
-65
-
150
150
C
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX.
0.9
0.65
-
UNIT
K/W
K/W
K/W
k
a1
1
a2
3
2
2
3
1
December 1998
1
Rev 1.000
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