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參數資料
| 型號： | PBYR745D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HD VIEW LINE SPLITTER |
| 中文描述： | 7.5 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 48K |
| 代理商： | PBYR745D |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR745B, PBYR745D series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 40 V/ 45 V
I
F(AV)
= 7.5 A
V
F
≤
0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.
The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR7
PBYR7
40B
40D
40
45B
45D
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
40
45
V
V
R
I
F(AV)
T
mb
≤
114 C
square wave;
δ
= 0.5; T
mb
≤
136 C
-
-
40
45
V
A
7.5
I
FRM
square wave;
δ
= 0.5; T
mb
≤
136 C
-
15
A
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
PBYR7..B
-
-
-
-
135
150
100
110
A
A
A
A
PBYR7..D
I
RRM
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
1
. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.
- 65
175
C
k
a
3
tab
1
2
3
tab
1
3
tab
2
July 1998
1
Rev 1.200
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