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參數(shù)資料
| 型號： | PC50F6 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | FRD MODULE 50A/600V/trr:100nsec |
| 中文描述： | 50 A, 600 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | PC50F6 |
FRD MODULE
50A/600V/trr:100nsec
PC50F6
Maximum Ratings
Approx Net Weight:105g
Voltage
Rating
Symbol
PC50F6
Unit
Repetitive Peak Reverse Voltage
per Arm
E lectrical Rating
V
RRM
600
V
Condition
Rating
Average Rectified Output Current
I
O
50Hz Half Sine Wave condition
per Arm Tc=89
°
C
I
F(RMS)
per Arm
50 Hz Half Sine Wave,1cycle
Non-repetitive per Arm
I
2
t
2 msec to 10 msec per Arm
Tjw
Tstg
Viso
Base Plate to Terminal, AC1min
Case mounting(recommended)
Ftor
Terminal Screw(recommended)
50
A
RMS Forward Current
78
A
Surge Forward Current
I
FSM
800
A
I Squared t
Operating J unctionTemperature Range
Storage Temperature Range
Isoration Voltage
3200
A
2
s
°
C
°
C
V
-40 to +150
-40 to +125
2000
2.6
1.4
Mounting torque
Electrical
Thermal Characteristics
N
m
Characteristics
Symbol
V
FM
I
RM
Test Conditions
Max. Unit
1.50
10
Peak Forward Voltage
Peak Reverse Current
I
FM
= 50A, Tj=25
°
C, per Arm
V
RM
= V
RRM,
Tj= 150
°
C, per Arm
I
FM
= 10A, -di/dt= 50 A/
μ
s, Ta= 25
°
C
Per Arm
Rth(j-c) J unction to Case per Arm
Rth(c-f)Base Plate to Heat Sink with Thermal
Compound
Anode Terminal to Cathode Terminal
Per Element
V
mA
Reverse Recovery Time
trr
100
ns
0.8
Thermal Resistance
0.1
°
C/W
Internal Lead Inductance
Ls
30
nH
FEATURES
* Isolated Base
* Dual Diode Cathode Common
* Ultra Fast Recovery
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
OUTLINE DRAWING
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