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參數(shù)資料
型號: PCHMB200B12A
廠商: NIHON INTER ELECTRONICS CORP
元件分類: 功率晶體管
英文描述: IGBT MODULE Chopper 200A 1200V
中文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-5
文件頁數(shù): 1/3頁
文件大小: 121K
代理商: PCHMB200B12A
IGBT
MODULE
Chopper 200A 1200V
PCHMB200B12A
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
°
C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
Collector Current
1 ms
Collector Power Dissipation
J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Item
DC
Forward Current
1 ms
Characteristic
Symbol
Peak Forward Voltage
V
F
Reverse Recovery Time
t
rr
THERMAL CHARACTERISTICS
Characteristic
IGBT
Thermal Impedance
DIODE
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
PCHMB200B12A
1200
+/ - 20
200
400
960
-40 to +150
-40 to +125
2500
3
2
Unit
V
V
A
W
°
C
°
C
V
F
TOR
N
m
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=1200V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=200A,V
GE
=15V
V
CE
=5V,I
C
=200mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 600V
R
L
= 3 ohm
R
G
= 2 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
1.9
-
16600
0.25
0.40
0.25
0.80
Max.
4.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
μ
A
V
V
pF
Switching Time
μ
s
Symbol
I
F
I
FM
Rated Value
200
400
Unit
A
Test Condition
I
F
=200A,V
GE
=0V
I
F
=200A,V
GE
=-10V,di/dt=400A/
μ
s
Min.
-
-
Typ.
1.9
0.2
Max.
2.4
0.3
Unit
V
μ
s
Symbol
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.125
0.24
Unit
R
th(j-c)
J unction to Case
°
C/W
2- fasten- tab No 110
Dimension(mm)
Approximate Weight : 320g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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