- 您現在的位置：買賣IC網 > PDF目錄383738 > PD55003S (意法半導體) RF POWER TRANSISTORS The LdmoST Plastic FAMILY PDF資料下載
參數資料
| 型號： | PD55003S |
| 廠商： | 意法半導體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 309K |
| 代理商： | PD55003S |
1/19
March, 21 2003
PD55003
PD55003S
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55003 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55003’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55003
BRANDING
PD55003
PowerSO-10RF
(Straight lead)
ORDER CODE
PD55003S
BRANDING
PD55003S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
±
20
V
2.5
A
31.7
W
165
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
3.0
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
相關PDF資料 |
PDF描述 |
|---|---|
| PD55008 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55008S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55015 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55015-PD55015S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55015S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PD55003S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003S-E-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD55003STR | 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003STR-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003TR | 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發布緊急采購，3分鐘左右您將得到回復。