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參數資料
型號: PD55035S
廠商: 意法半導體
英文描述: RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述: 射頻功率晶體管LdmoST塑料家庭
文件頁數: 1/14頁
文件大小: 181K
代理商: PD55035S
1/14
March, 21 2003
PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
±
20
V
7
A
95
W
165
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
相關PDF資料
PDF描述
PD55F120 THYRISTOR MODULE
PD55F160 THYRISTOR MODULE
PD55F40 THYRISTOR MODULE
PD55F80 THYRISTOR MODULE
PD55GB THYRISTOR MODULE
相關代理商/技術參數
參數描述
PD55035SE 制造商:STMicroelectronics 功能描述:
PD55035S-E 功能描述:射頻MOSFET電源晶體管 POWER RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55035STR-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55035TR-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PD557 制造商:TI 制造商全稱:Texas Instruments 功能描述:REMOTE 8-BIT I2C AND SMBus LOW-POWER I/O EXPANDER WITH RESET AND CONFIGURATION REGISTERS
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