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參數資料
| 型號： | PD57030 |
| 廠商： | 意法半導體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | PD57030 |
1/4
TARGET DATA
May 2000
PD57030
PD57030S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 30 W with 13 dB gain @ 945 MHz /28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57030 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57030 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57030’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
PD57030
BRANDING
XPD57030
PowerSO-10RF
(Straight Lead)
ORDER CODE
PD57030S
BRANDING
XPD57030S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
±
20
V
I
D
Drain Current
4
A
P
DISS
Power Dissipation (@ Tc = 70
0
C)
52.8
W
T
j
Max. Operating Junction Temperature
165
0
C
T
STG
Storage Temperature
-65 to 175
0
C
THERMAL DATA
(T
CASE
= 70
0
C)
R
th(j-c)
Junction-Case Thermal Resistance
1.8
0
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PD57030-E | 功能描述:射頻MOSFET電源晶體管 RF Pwr Transistors LDMOST Plastic N Ch RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57030-E_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD57030S | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 4 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57030S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57030STR-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
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