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參數資料
| 型號： | PDM1405HA |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MOSFET MODULE Dual 140A/500V |
| 中文描述： | 100 A, 500 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/3頁 |
| 文件大小： | 70K |
| 代理商： | PDM1405HA |
MOSFET
MODULE
Dual 140A /500V
PDM1405HA
MAXMUM RATINGS
Ratings
Symbol
V
DSS
V
GSS
PDM1405HA
500
+/ - 20
140 (Tc=25
°
C)
100 (Tc=25
°
C)
280 Tc=25
°
C)
880 Tc=25
°
C)
-40 to +150
-40 to +125
2000
3.0
2.0
Unit
V
V
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Duty=50%
D.C.
Continuous Drain Current
I
D
A
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25
°
C unless otherwise noted)
Characteristic
I
DM
P
D
T
jw
T
stg
V
ISO
A
W
°
C
°
C
V
F
TOR
N
m
Symbol
Test Condition
V
DS
=V
DSS
,V
GS
=0V
T
j
=125
°
C, V
DS
=0.8V
DSS
,V
GS
=0V
V
DS
=V
GS
, I
D
=3mA
V
GS
=+/- 20V,V
DS
=0V
V
GS
=10V, I
D
=70A
V
GS
=10V, I
D
=70A
V
DS
=15V, I
D
=70A
Min.
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3.1
-
35
3.0
100
28
3.6
0.8
300
420
810
200
Max.
2.0
8.0
4.0
1.0
40
3.4
-
-
-
-
-
-
-
-
Unit
Zero Gate Voltage Drain Current
I
DSS
mA
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Symbol
Continuous Source Current
I
S
Pulsed Source Current
I
SM
Diode Forward Voltage
V
SD
Reverse Recovery Time
t
rr
Reverse Recovery
Q
r
THERMAL CHARACTERISTICS
Characteristic
Symbol
V
GS(th)
I
GSS
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
μ
A
m-ohm
V
S
nF
nF
nF
V
DS
=25V,V
GS
=0V,f=1MHz
V
DD
= 1/2V
DSS
I
D
=70A
V
GS
= -5V, +10V
R
G
= 5 ohm
ns
Test Condition
Min.
-
-
-
-
-
Typ.
-
-
-
130
0.3
Max.
100
280
1.7
-
-
Unit
A
A
V
ns
μ
C
D.C.
-
I
S
=140A
I
S
=140A, -dis/dt=100A/
μ
s
Test Condition
Min.
-
-
-
Typ.
-
-
-
Max.
0.142
1.0
0.05
Unit
MOS FET
Diode
Mounting surface flat, smooth, and greased
Thermal Resistance, Junction to Case
R
th(j-c)
Thermal Resistance, Case to Heatsink
R
th(c-f)
°
C/W
Dimension(mm)
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Approximate Weight : 460g
OUTLINE DRAWING
Circuit
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相關代理商/技術參數 |
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| PDM1405HA_1 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:140A 500V |
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| PDM1602 WH005 | 制造商:Alpha Wire 功能描述:CBL 2COND 16AWG WH 100' |
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