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參數資料
| 型號： | PDTA114Y |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM |
| 中文描述： | PNP配電阻型晶體管；R1=10千歐姆，R2=47千歐姆 |
| 文件頁數： | 4/14頁 |
| 文件大小： | 92K |
| 代理商： | PDTA114Y |
2004 Aug 02
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 10 k
, R2 = 47 k
PDTA114Y series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
10
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
+6
40
100
100
V
V
mA
mA
I
O
I
CM
P
tot
T
amb
≤
25
°
C
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
65
65
500
250
250
200
250
250
150
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
250
500
500
625
500
500
833
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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| PDTA123JS | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PDTA114YE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM |
| PDTA114YE T/R | 功能描述:開關晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA114YE,115 | 功能描述:開關晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA114YE115 | 制造商:NXP Semiconductors 功能描述:BRT TRANSISTOR PNP -50V -100MA 10KOH 制造商:NXP Semiconductors 功能描述:TRANS PNP W/RES 50V SOT-416 |
| PDTA114YEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM |
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