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| 型號(hào)： | PDTC143XK |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 10 kohm |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | PLASTIC, SC-59A, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 86K |
| 代理商： | PDTC143XK |
PDTC143X_SER_9
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 09 — 26 July 2005
5 of 12
Philips Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 k
, R2 = 10 k
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on an FR4 PCB with 60
μ
m copper strip line, standard footprint.
7.
Characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
-
-
-
-
-
-
-
833
500
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
[1] [2]
-
[1]
-
[2] [3]
-
[1]
-
[1]
-
[1]
-
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
I
CEO
collector-emitter
cut-off current
Characteristics
Conditions
V
CB
= 50 V; I
E
= 0 A
Min
-
Typ
-
Max
100
Unit
nA
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
-
-
-
-
1
50
μ
A
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
-
-
600
μ
A
h
FE
V
CEsat
V
CE
= 5 V; I
C
= 10 mA
I
C
= 10 mA; I
B
= 0.5 mA
50
-
-
-
-
100
mV
V
I(off)
V
I(on)
R1
R2/R1
C
c
V
CE
= 5 V; I
C
= 100
μ
A
V
CE
= 300 mV; I
C
= 20 mA
-
2.5
3.3
1.7
-
-
-
4.7
2.1
-
0.3
-
6.1
2.6
2.5
V
V
k
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC143XK T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143XK,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143XM | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW |
| PDTC143XM T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143XM,315 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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