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參數資料
| 型號： | PDZ-B |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 穩壓二極管 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 63K |
| 代理商： | PDZ-B |
1998 Apr 23
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
FEATURES
Total power dissipation:
max. 400 mW
Small plastic package suitable for
surface mounted design
Wide variety of voltage ranges:
nom. 2.4 to 36 V (E24 range).
APPLICATIONS
General voltage regulation.
DESCRIPTION
Low-power general purpose voltage
regulator diodes in a small plastic
SMD SOD323 package.
PINNING
PIN
DESCRIPTION
1
2
cathode
anode
Fig.1 Simplified outline (SOD323) and symbol.
handbook, halfpage
1
2
Top view
MAM387
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board measuring 11
×
25
×
1.6 mm.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
ZG
ZH
ZJ
ZK
ZL
ZM
ZN
ZP
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
ZQ
ZR
ZS
ZT
ZU
SYMBOL
PARAMETER
CONDITIONS
MIN.
see Table 2
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
200
mA
t
p
= 100
μ
s; square wave;
T
amb
= 25
°
C prior to surge
T
amb
= 25
°
C; note 1; see Fig.2
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
400
+150
150
mW
°
C
°
C
65
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