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參數資料
| 型號： | PH8230E |
| 英文描述： | 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | TrenchMOS（商標）加強場效應晶體管邏輯電平 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 232K |
| 代理商： | PH8230E |
PH8230E
TrenchMOS enhanced logic level FET
Rev. 02 — 29 April 2003
Product data
M3D748
1.
Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS technology.
Product availability:
PH8230E in SOT669 (LFPAK).
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
I
Low thermal resistance
I
Low gate drive current
I
SO8 equivalent area footprint
I
Low on-state resistance.
I
DC-to-DC converters
I
Portable appliances
I
Switched-mode power supplies
I
Notebook computers.
I
V
DS
≤
30 V
I
P
tot
≤
62.5 W
I
I
D
≤
67 A
I
R
DSon
≤
8.2 m
Table 1:
Pin
Pinning - SOT669 (LFPAK), simplified outline and symbol
Description
Simplified outline
Symbol
1,2,3
source (s)
SOT669 (LFPAK)
4
gate (g)
mb
mounting base;
connected to drain (d)
1
Top view
MBL286
2
3
mb
4
s
d
g
MBB076
相關PDF資料 |
PDF描述 |
|---|---|
| PHA1480-20 | 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHA1516-10 | 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 20; Temperature Range: 0°C to +70°C |
| PHA1516-2 | 1, 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems; Package: PDIP; No of Pins: 20; Temperature Range: 0°C to +70°C |
| PHA1516-30 | Micropower Sampling 8-Bit Serial I/O A/D Converters; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHA1617-10 | Micropower Sampling 8-Bit Serial I/O A/D Converters; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PH8230E T/R | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 30V 67A 5-Pin(4+Tab) LFPAK T/R |
| PH8230E,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH8230E | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET, N, 30V, LFPAK |
| PH-8365-115-135-035 | 制造商:WASHERS 功能描述: |
| PH865C12 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:High Voltage Schottky barrier diode |
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