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參數(shù)資料
| 型號： | PHA3135-130M |
| 英文描述： | Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | RadarPulsedPowerModule，115，，130145糯100msPulse 3.1 - 3.5吉赫 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 122K |
| 代理商： | PHA3135-130M |
RadarPulsedPowerModule,115,130,145W,100
μ
sPulse
3.1 - 3.5 GHz
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
I
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
I
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V4.00
Features
NPN Silicon Power Transistor
Input and Output Matched to 50
Duroid Circuit Board
Easily Combined for High Power Transmitters
Plated Copper Flange
G
G
G
G
G
Parameter
Absolute Maximum
40V
26.5V
200A
0.24A
Suppy Voltage
Input Power
Output Power @ 3.3 GHz
Thermal Resistance / Per
Transistor
Power Dissipation
Operating Case Temp.
Storage Temperature
400W
-30 to 1200°C
-40 to +125°C
Absolute Maximum Ratings
at 25°C
1
1. Operation of this device outside of these limits may cause
permanent damage.
Parameter
Symbol
Test Conditions
Units
Min.
Max.
Output Power
Output Power
Output Power
Power Gain
Power Gain
Power Gain
Collector Efficiency
Input Return Loss
Load VSWR Tolerance
Load VSWR Stability
P
OUT
P
OUT
P
OUT
G
P
G
P
G
P
η
C
RL
VSWR-T
VSWR-S
V
CC
=36 V, P
IN
=21 W, F=3.1 GHz
V
CC
=36 V, P
IN
=21 W, F=3.3 GHz
V
CC
=36 V, P
IN
=21 W, F=3.5 GHz
V
CC
=36 V, P
IN
=21 W, F=3.1 GHz
V
CC
=36 V, P
IN
=21 W, F=3.3 GHz
V
CC
=36 V, P
IN
=21 W, F=3.5 GHz
V
CC
=36 V, P
IN
=21 W, F=3.1, 3.3, 3.5 GHz
V
CC
=36 V, P
IN
=21 W, F=3.1, 3.3, 3.5 GHz
V
CC
=36 V, P
IN
=21 W, F=3.1, 3.3, 3.5 GHz
V
CC
=36 V, P
IN
=21 W, F=3.1, 3.3, 3.5 GHz
W
W
W
dB
dB
dB
%
dB
-
-
145
130
115
8.4
7.9
7.4
35
6
-
-
-
-
-
-
-
-
-
-
3:1
2:1
Electrical Characteristics
at 25°C
PHA3135-130M
Unless Otherwise Noted, Tolerances Are: Inches ±.005
(Millimeters ±13mm)
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