- 您現在的位置：買賣IC網 > PDF目錄367937 > PHB21N06T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard level FET PDF資料下載
參數資料
| 型號： | PHB21N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 21 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 69K |
| 代理商： | PHB21N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB21N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor
in
a
suitable for surface mounting. Using
’
trench
’
technology
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
21
69
175
75
V
A
W
C
m
the
device
V
GS
= 10 V
in
DC-DC
general purpose
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
21
14.7
84
69
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
2.18
UNIT
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
d
g
s
1
3
mb
2
December 1997
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| PHB24N03LT | TrenchMOS transistor Logic level FET |
| PHP24N03LT | TrenchMOS transistor Logic level FET |
| PHB24N03T | TrenchMOS transistor Standard level FET |
| PHB2N60E | PowerMOS transistors Avalanche energy rated |
| PHP2N60E | PowerMOS transistors Avalanche energy rated |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHB21N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 21A I(D) | SOT-404 |
| PHB222NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOSTM logic level FET |
| PHB222NQ04LT,118 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB225NQ04T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHB225NQ04T,118 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。