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參數(shù)資料
型號: PHB3N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-404, 3 PIN
文件頁數(shù): 1/9頁
文件大小: 79K
代理商: PHB3N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N60E, PHB3N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 600 V
I
D
= 2.8 A
R
DS(ON)
4.4
GENERAL DESCRIPTION
N-channel,enhancement modefield-effectpower transistor,intendedforusein off-lineswitchedmode powersupplies,
T.V.and computer monitor powersupplies, d.c. tod.c.converters, motor controlcircuits and generalpurpose switching
applications.
The PHP3N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB3N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
2.8
1.8
11
83
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
December 1998
1
Rev 1.200
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相關代理商/技術參數(shù)
參數(shù)描述
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