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參數資料
| 型號： | PHB69N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| 中文描述： | 69 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 108K |
| 代理商： | PHB69N03LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP69N03LT, PHB69N03LT
PHD69N03LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 25 V
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
Logic level compatible
I
D
= 69 A
R
DS(ON)
≤
12 m
(V
GS
= 10 V)
R
DS(ON)
≤
14 m
(V
GS
= 5 V)
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’
trench
’ technology.
Applications:-
High frequency computer motherboard d.c. to d.c. converters
High current switching
The PHP69N03LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB69N03LT is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHD69N03LT is supplied in the SOT428 (DPAK)surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
SOT428 (DPAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage (DC)
V
GSM
Gate-source voltage (pulse
peak value)
I
D
Drain current (DC)
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
MAX.
25
25
±
15
±
20
UNIT
V
V
V
V
T
j
≤
150C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
-
-
-
69
48
240
A
A
A
I
DM
Drain current (pulse peak
value)
Total power dissipation
Operating junction and
storage temperature
P
tot
T
j
, T
stg
T
mb
= 25 C
-
125
175
W
C
- 55
d
g
s
1 2 3
tab
1
3
tab
2
1
2
3
tab
1
It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
October 1999
1
Rev 1.600
相關PDF資料 |
PDF描述 |
|---|---|
| PHD69N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHP69N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHB69N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHB80N06LT | TrenchMOS transistor Logic level FET |
| PHB80N06T | TrenchMOS transistor Standard level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHB69N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 69A I(D) | SOT-404 |
| PHB69N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB69N03TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 69A I(D) | SOT-404 |
| PHB6N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB6N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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