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參數資料
| 型號： | PHD44N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 80K |
| 代理商： | PHD44N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP44N06LT, PHB44N06LT, PHD44N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 44 A
R
DS(ON)
≤
28 m
(V
GS
= 5 V)
R
DS(ON)
≤
26 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP44N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB44N06LT is supplied in the SOT404 surface mounting package.
The PHD44N06LT is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
44
31
176
114
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
2
3
tab
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
September 1998
1
Rev 1.400
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相關代理商/技術參數 |
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|---|---|
| PHD45N03LTA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
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| PHD45NQ15T,118 | 功能描述:兩極晶體管 - BJT TRENCH-150 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PHD48N22-7A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Fuse-Programmable PLD |
| PHD50N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
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