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參數(shù)資料
| 型號(hào)： | PHK4NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 84K |
| 代理商： | PHK4NQ10T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHK4NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low on-state resistance
Fast switching
Low profile surface mount
package
V
DS
= 100 V
I
D
= 4 A
R
DS(ON)
≤
70 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
PINNING
SOT96-1 (SO8)
N-channel
field-effect transistor in a plastic
envelope
using
technology.
enhancement
mode
PIN
DESCRIPTION
’
trench
’
1-3
source
4
gate
Applications:-
Motor and relay drivers
d.c. to d.c. converters
5-8
drain
The PHK4NQ10T is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DSS
V
DGR
PARAMETER
Drain-source voltage
Drain-gate voltage
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C;
R
GS
= 20 k
MIN.
-
-
MAX.
100
100
UNIT
V
V
V
GS
I
D
Gate-source voltage
Drain current (t
p
≤
10 s)
-
-
-
-
-
-
±
20
4
3
16
2.5
1.6
150
V
A
A
A
W
W
C
T
a
= 25 C
T
a
= 70 C
T
a
= 25 C
T
a
= 25 C, t
≤
10 s
T
a
= 70 C, t
≤
10 s
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
j
, T
stg
Operating junction and storage
temperature
- 65
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
Thermal resistance junction
to ambient
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t
≤
10 sec
TYP.
-
MAX.
50
UNIT
K/W
Surface mounted, FR4 board
150
-
K/W
d
g
s
1
2
3
4
5
6
7
8
pin 1 index
August 1999
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHK4NQ10T /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHK4NQ10T,518 | 功能描述:MOSFET N-CH TRENCHMOSTM TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHK4NQ20T | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHK4NQ20T /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHK4NQ20T,518 | 功能描述:MOSFET N-CH 200V 4A Trans MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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