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參數(shù)資料
| 型號： | PHM8001 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MOSFET MODULE Single 900A/150A |
| 中文描述： | 640 A, 150 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | PHM8001 |
MOSFET
MODULE
Single 800A /150V
PHM8001
MAXMUM RATINGS
Ratings
Symbol
V
DSS
V
GSS
PHM8001
150
+/ - 20
800 (Tc=25
°
C)
640 (Tc=25
°
C)
1,600 Tc=25
°
C)
2,650 Tc=25
°
C)
-40 to +150
-40 to +125
2,500
3.0
Unit
V
V
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Duty=50%
D.C.
Continuous Drain Current
I
D
A
Pulsed Drain Current
Total Power Dissipation
Operating J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Gate Terminals
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25
°
C unless otherwise noted)
Characteristic
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Symbol
I
DM
P
D
T
jw
T
stg
V
ISO
A
W
°
C
°
C
V
M4
M8
1.4
10.5
F
TOR
N
m
Symbol
I
DSS
I
GSS
V
GS(th)
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
r
t
d(on)
t
f
t
d(off)
Test Condition
V
DS
=V
DSS
,V
GS
=0V
V
GS
=+/- 20V,V
DS
=0V
V
DS
=V
GS
, I
D
=16mA
V
GS
=10V, I
D
=800A
V
GS
=10V, I
D
=800A
V
DS
=15V, I
D
=800A
Min.
-
-
1.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.0
1.15
1.10
-
165
20
20
500
880
180
1,300
Max.
4.8
4.8
3.2
1.4
1.25
-
-
-
-
-
-
-
-
Unit
mA
μ
A
V
m-ohm
V
S
nF
nF
nF
V
DS
=10V,V
GS
=0V,f=1MHz
V
DD
= 80V
I
D
=400A
V
GS
= -5V, +10V
R
G
= 0.75 ohm
ns
Test Condition
Min.
-
-
-
-
Typ.
-
-
1.10
130
Max.
800
650
1,600
1.76
-
Unit
Duty=50%.
D.C. (Terminal Temperature=80
°
C
Continuous Source Current
I
S
A
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
THERMAL CHRACTERISTICS
Characteristic
Thermal Resistance, J unction to Case
Thermal Resistance, Case to Heatsink
I
SM
V
SD
t
rr
-
A
V
ns
I
S
=800A
I
S
=800A, -dis/dt=1,600A/
μ
s
Symbol
R
th(j-c)
R
th(c-f)
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.047
0.035
Unit
Mounting surface flat, smooth, and greased
°
C/W
FEATURES
* Trench Gate MOS FET Module
* Super Low Rds(ON) 1.4 milliohms( @800A )
* With Fast Recovery Source-Drain Diode
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
Approximate Weight : 650g
OUTLINE DRAWING
Circuit
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