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參數資料
| 型號： | PHP152NQ03LTA |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 5/13頁 |
| 文件大小： | 102K |
| 代理商： | PHP152NQ03LTA |
Philips Semiconductors
PHP/PHB152NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 20 February 2002
5 of 13
9397 750 09353
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
T
j
= 25
°
C
25
22
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
1.5
2
2.3
V
V
V
I
DSS
drain-source leakage current
0.05
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
3.6
6.5
5
8.7
m
m
3
4
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 50 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
42
13.5
14.5
3550
1020
400
28
115
86
77
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
V
DD
= 15 V; I
D
= 25 A; V
GS
= 5 V;
R
G
= 5.6
; resistive load
-
-
0.85
45
40
1.2
-
-
V
ns
nC
I
S
= 10 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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