- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367941 > PHP33N10 (NXP SEMICONDUCTORS) PowerMOS transistor(功率MOS晶體管) PDF資料下載
參數(shù)資料
| 型號： | PHP33N10 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor(功率MOS晶體管) |
| 中文描述： | 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 73K |
| 代理商： | PHP33N10 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP33N10
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic envelope featuring
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
stable
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
100
34
175
0.057
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
- 55
MAX.
34
24
136
150
1.167
±
30
175
UNIT
A
A
A
W
W/K
V
C
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
T
j
stg
Operating junction and
storage temperature range
Pulsed drain current
Total dissipation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP34NQ11T | N-channel TrenchMOS⑩ standard level FET |
| PHP37N06LT | TrenchMOS transistor Logic level FET |
| PHP37N06 | TrenchMOS transistor Logic level FET |
| PHB37N06LT | TrenchMOS transistor Logic level FET |
| PHD37N06LT | TrenchMOS transistor Logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP33N10/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT |
| PHP33NQ20T | 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP33NQ20T,127 | 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP34NQ10T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHP34NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS⑩ standard level FET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。