- 您現在的位置：買賣IC網 > PDF目錄367941 > PHP37N06T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) PDF資料下載
參數資料
| 型號： | PHP37N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| 中文描述： | 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 65K |
| 代理商： | PHP37N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP37N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor in a plastic envelope using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
37
100
175
35
V
A
W
C
m
The
device
in
DC-DC
V
GS
= 10 V
general purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
37
26
148
100
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.5
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
December 1997
1
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| PHP3N40E | PowerMOS transistors Avalanche energy rated |
| PHB3N40E | PowerMOS transistors Avalanche energy rated |
| PHD3N40E | PowerMOS transistors Avalanche energy rated |
| PHP3N50 | PowerMOS transistor |
| PHP42N03LT | TrenchMOS transistor Logic level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHP3N20E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP3N20L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| PHP3N40E | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220AB |
| PHP3N40E/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO-220 |
| PHP3N50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
發布緊急采購，3分鐘左右您將得到回復。