- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382392 > PHP4N50E (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PHP4N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 5.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | PHP4N50E |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP4N50E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
featuring
high
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
500
5.3
100
1.5
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
MAX.
500
500
30
5.3
3.3
21
UNIT
V
V
V
A
A
A
R
GS
= 20 k
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
I
DM
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
I
DR
T
mb
= 25 C
-
5.3
A
I
DRM
T
mb
= 25 C
-
21
A
P
tot
T
stg
T
j
T
mb
= 25 C
-
100
150
150
W
C
C
-55
-
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 5.3 A; V
DD
≤
50 V; V
GS
= 10 V;
R
GS
= 50
MIN.
MAX.
UNIT
T
= 25C prior to surge
T
= 100C prior to surge
-
-
-
280
44
7.4
mJ
mJ
mJ
W
DSR
1
Drain-source repetitive
unclamped inductive turn-off
energy
I
D
= 5.3 A; V
DD
≤
50 V; V
GS
= 10 V;
R
GS
= 50
; T
j
≤
150 C
Pulse width and frequency limited by T
j(max)
1 2 3
tab
d
g
s
October 1996
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP4ND40E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB4ND40E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHP50N03T | TrenchMOS transistor Standard level FET |
| PHP50N06 | PowerMOS transistor |
| PHP66NQ03LT | Turret Lug, for 1.6mm panel thickness |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP4ND40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHP-4P2C-5 | 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述: |
| PHP-4P4C-5 | 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述: |
| PHP500 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 708V 15KW 2-Pin 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 708V 15KW 2PIN CASE 11 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。