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參數(shù)資料
型號: PHP63NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS logic level FET
中文描述: 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 6/14頁
文件大?。?/td> 104K
代理商: PHP63NQ03LT
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 14 June 2002
6 of 14
9397 750 09822
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai85
0
20
40
60
80
0
0.4
0.8
1.2
1.6
VDS (V)
ID
(A)
5 V
Tj = 25
°
C
VGS = 3 V
10 V
4.5 V
5.5 V
3.5 V
4 V
6 V
03ai87
0
20
40
60
80
0
2
4
6
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj
= 25
°
C
175
°
C
03ai86
0
10
20
30
0
20
40
60
80
ID (A)
RDSon
(m
)
5 V
VGS = 4.5 V
Tj = 25
°
C
5.5V
6 V
10 V
03af18
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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參數(shù)描述
PHP63NQ03LT,127 功能描述:MOSFET PHP63NQ03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP63NQ03LT 制造商:NXP Semiconductors 功能描述:MOSFET N 30V TO-220
PHP65N06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHP65N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
PHP66NQ03LT 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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