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參數資料
| 型號： | PHX1N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| 中文描述： | 1.75 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 24K |
| 代理商： | PHX1N40E |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N40E
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
Q
g(tot)
Total gate charge
Q
gs
Gate to source charge
Q
gd
Gate to drain (Miller) charge
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
t
rr
Source-drain diode reverse
recovery time
Q
rr
Source-drain diode reverse
recovery charge
L
d
Internal drain inductance
CONDITIONS
V
DS
= 15 V; I
D
= 1.25 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.9
225
30
6.0
12
2
6
10
30
30
20
350
MAX.
-
315
42
12
-
-
-
15
45
40
30
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
= 10 V; I
D
= 2.5 A; V
DS
= 320 V
V
DD
= 30 V; I
D
= 2.2 A;
V
GS
= 10 V; R
GS
= 50
;
R
GEN
= 50
I
F
= 2.5 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
2.5
-
μ
C
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
November 1996
3
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| PHX1N40 | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| PHX1N50E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| PHX1N60E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
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| PHX2N40E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHX1N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E |
| PHX1N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E |
| PHX20N06T | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX20N06T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX23NQ10T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
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