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參數資料
| 型號： | PHX23NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, FPAK-3 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 61K |
| 代理商： | PHX23NQ10T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX23NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 23A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0.1
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Source-Drain Voltage, VSDS (V)
1.1 1.2 1.3 1.4 1.5
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
September 1999
6
Rev 1.000
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