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參數資料
| 型號： | PHX2N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| 中文描述： | 2.4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, FULLPACK-3 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 24K |
| 代理商： | PHX2N40E |
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX2N40E
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
Q
g(tot)
Total gate charge
Q
gs
Gate to source charge
Q
gd
Gate to drain (Miller) charge
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
t
rr
Source-drain diode reverse
recovery time
Q
rr
Source-drain diode reverse
recovery charge
L
d
Internal drain inductance
CONDITIONS
V
DS
= 15 V; I
D
= 2.1 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1.7
-
-
-
-
-
-
-
-
-
-
-
TYP.
2.0
360
60
25
19
2
10
15
40
50
30
300
MAX.
-
500
80
60
-
-
-
20
60
65
40
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
= 10 V; I
D
= 4.2 A; V
DS
= 320 V
V
DD
= 30 V; I
D
= 2.5 A;
V
GS
= 10 V; R
GS
= 50
;
R
GEN
= 50
I
F
= 4.2 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
2.5
-
μ
C
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
November 1996
3
Rev 1.000
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