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參數(shù)資料
| 型號(hào)： | PHX2N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.4 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 77K |
| 代理商： | PHX2N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX2N50E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-hs / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
ZTHX43
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
0
1
2
3
4
5
6
VGS = 5 V
6 V
6.5 V
7 V
10 V
20 V
PHP2N50
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5.5 V
10
100
1000
0.01
0.1
1
10
PHX1N50
Drain-source voltage, VDS (Volts)
Drain current, ID (Amps)
RDS(ON) = VDS/ID
DC
100us
1ms
10ms
100ms
10 us
tp =
0
1
2
3
4
5
0
2
4
6
8
10
PHP2N50
6.5 V
7 V
10 V
VGS = 20 V
Drain current, ID (Amps)
Drain-Source on resistance, RDS(ON) (Ohms)
6 V
5.5 V
5V
Tj = 25 C
December 1998
4
Rev 1.200
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