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參數(shù)資料
| 型號(hào)： | PHX2N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.3 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 65K |
| 代理商： | PHX2N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX2N60E
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 1 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
0
5
10
15
20
25
30
0
1
2
3
4
VGS = 4.5 V
5 V
5.5 V
6 V
10 V
20 V
PHP1N60A
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
6.5 V
Tj = 25 C
0
1
2
3
4
5
0
0.5
1
1.5
2
PHP1N60A
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
3
4
0
2
4
6
8
10
12
PHP1N60A
6.5 V
10 V
VGS = 20 V
Drain current, ID (Amps)
Drain-Source on resistance, RDS(ON) (Ohms)
5.5 V
5 V
6 V
Tj = 25 C
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
0
2
4
6
8
10
0
1
2
3
4
5
PHP1N60A
Tj = 25 C
150 C
Drain current, ID (A)
Gate-source voltage, VGS (V)
VDS > ID x RDS(on)max
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
December 1998
4
Rev 1.200
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