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參數資料
型號: PHX3N40E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 1.7 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: FULL PACK-3
文件頁數: 1/8頁
文件大小: 64K
代理商: PHX3N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX3N40E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Isolated package
V
DSS
= 400 V
I
D
= 1.7 A
R
DS(ON)
3.5
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
case
isolated
The PHX3N40E is supplied in the
SOT186A
full
package.
pack,
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
±
30
1.7
1.1
10
25
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 0.9 A;
t
p
= 0.53 ms; T
j
prior to avalanche = 25C;
V
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
120
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 2.5 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
3.2
mJ
I
AS
, I
AR
-
2.5
A
d
g
s
1 2 3
case
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.200
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