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參數資料
| 型號： | PI4884 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS logic level FET |
| 中文描述： | 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 97K |
| 代理商： | PI4884 |
Philips Semiconductors
PI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
5 of 12
9397 750 09583
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
I
D
= 250
μ
A; V
DS
= V
GS
;
Figure 9
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 100
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 10 A;
Figure 7
and
8
V
GS
= 10 V; I
D
= 12 A;
30
1
-
-
-
2
V
V
-
-
-
-
-
-
-
1
5
100
16.5
10.5
μ
A
μ
A
nA
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
11
8.9
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 1 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
V
DS
= 15 V; I
D
= 10 A;
I
D
= 15 A; V
DD
= 16 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
34
17.6
4
4.4
1335 -
391
190
10.6
11.7
37
19
-
-
-
-
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 16 V; R
D
= 10
; V
GS
= 10 V
-
-
0.7
70
1.0
-
V
ns
I
S
= 2.3 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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