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參數資料
| 型號： | PJ2N9015CT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PRE-APLIFIER, LOW LEVEL&LOW NOISE |
| 中文描述： | 預APLIFIER，低水平 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 188K |
| 代理商： | PJ2N9015CT |
PJ2N9015
PNP Epitaxial Silicon Transistor
1-3
2002/01.rev.A
PRE-APLIFIER, LOW LEVEL&LOW NOISE
High total power dissipation (PT=450mW)
High h
FE
and good linearity
Complementary to PJ2N9014
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(ON)
C
ob
f
T
NF
Test Conditions
I
C
= -100
μ
A , I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -100
μ
A , I
C
=0
V
CB
= -50V , I
E
= 0
V
EB
= -5V , I
C
=0
V
EB
= -5V, I
C
= -1 mA
I
C
= -100 mA, I
B
= -5mA
I
C
= -100mA , I
B
= -5mA
V
CE
= -5V, Ic = -2 mA
V
CB
= -10V, IE = 0
f=1MHz
V
CE
= -5V, Ic = -10 mA
V
CE
= -5V, Ic = -0.2 mA
f=1KHz, Rs=2K
Min
-50
-45
-5
60
-0.6
100
Typ
200
-0.2
-0.82
-0.65
4.5
190
0.7
Max
-50
-50
600
-0.7
-1.0
-0.75
7.0
10
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
dB
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Produce
Noise Figure
Classification
A
B
C
D
H
FE
60-150
100-300
200-600
400-1000
Characteristic
Symbol
Rating
Uint
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
Ic
Pc
Tj
Tstg
-50
-45
-5
-100
450
150
-55 ~150
V
V
V
mA
mW
°
C
°
C
Device
PJ2N9015CT
PJ2N9015CX
Operating Temperature
-20
℃～
+85
℃
Package
TO-92
SOT-23
TO-92 SOT-23
ABSOLUTE MAXIMUM RATINGS
(Ta= 25
°
C
)
ELECTRICAL CHARACTERISTICS
(Ta= 25
°
C
)
h
EF
CLASSIFICATION
Pin : 1. Emitter
2. Base
3. Collector
Pin : 1.Base
2.Emitter
3. Collector
ORDERING INFORMATION
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