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參數(shù)資料
| 型號(hào)： | PJ32 |
| 廠商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor General Purpose Amplifier |
| 中文描述： | 硅結(jié)場效應(yīng)晶體管通用放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 129K |
| 代理商： | PJ32 |
At 25°C free air temperature:
PJ32 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
30
50
1
V
nA
mA
V
I
G
= 1 μA, V
DS
=
V
GS
= 15V, V
DS
=
V
DS
= – 15V, V
GS
=
V
DS
= – 15V, I
D
= 1 nA
2
– 1
0.5
– 15
7
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
ˉ
N
2.5
3.2
1.7
10
mS
pF
pF
V
DS
= – 15V, V
GS
=
V
DS
= , V
GS
= 10
V
DS
= , V
GS
= 10
nV/
√
HZ V
DS
= 10V, V
GS
=
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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