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參數資料
型號: PMN5118US
廠商: ERICSSON POWER MODULES AB
元件分類: 電源模塊
英文描述: 1-OUTPUT 108 W DC-DC REG PWR SUPPLY MODULE
封裝: ROHS COMPLIANT, SMD-14
文件頁數: 1/37頁
文件大小: 1906K
代理商: PMN5118US
Ericsson Internal
PRODUCT SPECIFICATION
1 (4)
Prepared (also subject responsible if other)
No.
EWEIXIE
1/1301-BMR656 5118 Uen
Approved
Checked
Date
Rev
Reference
SEC/D (Julia You)
EMINTAO
2007-07-30
B
Key Features
Industry standard POLA compatible
34.8 x 15.75 x 8.5 mm (1.37 x 0.62 x 0.335 in.)
High efficiency, up to. 96%
Auto Track sequencing pin
Turbo Trans Technology for Ultra-Fast Transient
More than 3.6 million hours MTBF
General Characteristics
Operating temperature: -40C to 85C
Input under voltage protection
Start up into a pre-biased output
Output short-circuit protection
On/Off inhibit control
Wide output voltage adjust function
Highly automated manufacturing ensures quality
ISO 9001/14001 certified supplier
Safety Approvals
Design for Environment
Meets requirements in high-
temperature lead-free soldering
processes.
Ericsson Internal
TABLE OF CONTENTS
1 (1)
Prepared (also subject responsible if other)
No.
EWEIXIE
001 52-EN/LZT 146 386
Approved
Checked
Date
Rev
Reference
SEC/D (Julia You)
EMINTAO
2007-07-30
B
Contents
General Information
............................................................. 2
Safety Specification
............................................................. 3
Absolute Maximum Ratings
............................................................. 4
Product Program
Ordering No.
0.7-3.6V, 30A / 108W
PMN 5118U P ........................................
0.7V, 30A / 21W Electrical Specification
............................................................. 5
1.0V, 30A / 30W Electrical Specification
............................................................. 8
1.2V, 30A / 36W Electrical Specification
........................................................... 11
1.5V, 30A / 45W Electrical Specification
........................................................... 14
1.8V, 30A / 54W Electrical Specification
........................................................... 17
2.5V, 30A / 75W Electrical Specification
........................................................... 20
3.3V, 30A / 99W Electrical Specification
........................................................... 23
EMC Specification
........................................................... 26
Operating Information
........................................................... 26
Thermal Consideration
........................................................... 30
Connections
........................................................... 31
Mechanical Information
........................................................... 33
Soldering Information
........................................................... 35
Delivery Information
........................................................... 36
Product Qualification Specification
........................................................... 37
E
PMN 5000 series
POL regulator, Input 4.5-5.5 V, Output up to 30 A/108 W
EN/LZT 146 386 R1A
July 2007
Ericsson Power Modules AB
Technical Specification
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相關代理商/技術參數
參數描述
PMN5118USR 功能描述:DC/DC轉換器 0.7-3.6V 30A Non-Iso Input 4.5-5.5V 108W RoHS:否 制造商:Murata 產品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓(標稱): 輸出端數量:1 輸出電壓(通道 1):3.3 V 輸出電流(通道 1):600 mA 輸出電壓(通道 2): 輸出電流(通道 2): 安裝風格:SMD/SMT 封裝 / 箱體尺寸:
P-MN5218 制造商:Panasonic Industrial Company 功能描述:IC
PMN52XPX 功能描述:MOSFET P-CH 20V SC-74 制造商:nexperia usa inc. 系列:- 包裝:剪切帶(CT) 零件狀態:在售 FET 類型:P 溝道 技術:MOSFET(金屬氧化物) 漏源電壓(Vdss):20V 電流 - 連續漏極(Id)(25°C 時):3.7A(Ta) 驅動電壓(最大 Rds On,最小 Rds On):1.5V,4.5V 不同 Id 時的 Vgs(th)(最大值):900mV @ 250μA 不同 Vgs 時的柵極電荷?(Qg)(最大值):12nC @ 4.5V Vgs(最大值):±12V 不同 Vds 時的輸入電容(Ciss)(最大值):763pF @ 10V FET 功能:- 功率耗散(最大值):530mW(Ta), 4.46W(Tc) 不同?Id,Vgs 時的?Rds On(最大值):62 毫歐 @ 3.7A,4.5V 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 供應商器件封裝:6-TSOP 封裝/外殼:SC-74,SOT-457 標準包裝:1
PMN55LN 制造商:NXP Semiconductors 功能描述:MOSFET N CH 20V 4.1A SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 20V, 4.1A, SOT457 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 20V, 4.1A, SOT457; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.75W; No. of Pins:6 ;RoHS Compliant: Yes
PMN55LN /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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