- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368080 > PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | PN2484 |
| 英文描述： | LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS |
| 中文描述： | 低水平，低噪聲NPN硅平面型晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | PN2484 |
P
PN2484
MMBT2484
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
μ
to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
60
5.0
100
V
V
V
mA
°
C
T
J
, T
stg
-55 to +150
Symbol
Characteristic
Max
Units
PN2484
625
5.0
83.3
200
*MMBT2484
350
2.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
CBE
TO-92
SOT-23
Mark: 1U
C
B
E
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PN2484 | Small Signal Transistors |
| PN2906 | PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
| PN2906A | PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
| PN2907 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| PN2907A | PNP switching transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PN2484_00 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| PN2484_D26Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN2484_D27Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN2484_D74Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN2484_D75Z | 功能描述:兩極晶體管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。