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參數資料
| 型號： | PNA1601M(PN166) |
| 英文描述： | PNA1601M (PN166) - Silicon NPN Phototransistor |
| 中文描述： | PNA1601M（PN166） -硅npn型光電晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | PNA1601M(PN166) |
1
PNA1601
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Ultraminiature, thin side-view type package
Phototransistors
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
2.6
±
0.2
1.2
±
0.2
(0.4)
0.8
C0.5
R0.55
1.4
±
0.2
Unit : mm
1: Collector
2: Emitter
2-0.45
2-0.7
0.15
2.0
2
1
1
2
0
0
2
±
0
1
±
1
0
G
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
–25 to +65
–30 to +85
Unit
V
mA
mW
C
C
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
max
0.2
Unit
μ
A
μ
A
nm
deg.
μ
s
μ
s
V
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, H = 15
μ
W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100
I
CE(L)
= 10
μ
A, H = 15
μ
W/cm
2
3
850
35
4
4
0.5
*1
Measurements were made using infrared light (
λ
= 940 nm) as a light source.
*2
Switching time measuring circuit
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