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參數資料
| 型號： | PNZ0111 |
| 英文描述： | PHOTOTRANSISTOR | NPN | 900NM PEAK WAVELENGTH | 10M | DOME-5.1 |
| 中文描述： | 光電晶體管|叩| 900nm波長峰值波長| 1000萬|穹頂- 5.1 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 43K |
| 代理商： | PNZ0111 |
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
30
40
5
5
50
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
5
3.5
800
10
3
0.2
max
300
Unit
nA
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 500 lx
*1
1.5
0.4
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Phototransistors
PNZ0102
Silicon NPN Phototransistor
For optical control systems
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Glass lens
6
±
0
1: Emitter
2: Base
2: Collector
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
3-0.45
±
0.05
1
4
±
3
1
2
3
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current : I
CEO
= 5 nA (typ.)
Fast response : t
r
, t
f
= 3
μ
s (typ.)
Base pin for easy circuit design
TO-18 standard type package
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