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參數(shù)資料
| 型號(hào)： | PNZ155(PN155) |
| 英文描述： | PNZ155 (PN155) - Silicon NPN Phototransistor |
| 中文描述： | PNZ155（PN155） -硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | PNZ155(PN155) |
1
PNZ150
(PN150)
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.01
3
800
35
4
0.2
max
1
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
1
10
0.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
100
–25 to +85
–30 to +100
Unit
V
mA
mW
C
C
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
2.3
1.9
4.5
±
0.3
2.54
1.2
4.5
±
0.3
3.5
±
0.2
4
±
0
2
2
2
1
1
1
1
0.45
±
0.15
2-0.45
±
0.15
2-0.98
±
0.2
R1.75
N
1: Emitter
2: Collector
Unit : mm
1
2
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Side-view type package
Note) The part number in the parenthesis shows conventional part number.
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