EUPEC原裝FZ800R12KE3,800安1200伏IGBT！
型號:FZ800R12KE3
廠家:歐派克(EUPEC)
封裝:模塊 62mm
飽和壓降:1.7V
原廠支持,現貨庫存,誠信價低，歡迎來電咨詢！
IGBT-WechselrIChter / IGBT-inverter
H?chstzul?ssige Werte / maximum rated values
|
Kollektor-Emitter-Sperrspannung collector-emitter voltage |
TY? = 25°C |
V??? |
1200 |
V |
|
Kollektor-Dauergleichstrom DC-collector current |
T? = 80°C, TY? = 150°C |
I? òó? |
800 |
A |
|
Periodischer Kollektor Spitzenstrom repetitive peak collector current |
t? = 1 ms, T? = 80°C |
I??￠ |
1600 |
A |
|
Gesamt-Verlustleistung total power dissipation |
T? = 25°C, TY? = 150°C |
Púóú |
3550 |
W |
|
Gate-Emitter-Spitzenspannung gate-emitter peak voltage |
|
V??? |
+/-20 |
V |
Charakteristische Werte / characteristic values min. typ. max.
|
Kollektor-Emitter S?ttigungsspannung collector-emitter saturation voltage |
I? = 800 A, V?? = 15 V TY? = 25°C I? = 800 A, V?? = 15 V TY? = 125°C |
V?? ùèú |
|
1,70 2,00 |
2,15 |
V V |
|
Gate-Schwellenspannung gate threshold voltage |
I? = 32,0 mA, V?? = V??, TY? = 25°C |
V??úì |
5,0 |
5,8 |
6,5 |
V |
|
Gateladung gate charge |
V?? = -15 V ... +15 V |
Q? |
|
7,40 |
|
μC |
|
Interner Gatewiderstand internal gate resistor |
TY? = 25°C |
R?íòú |
|
0,94 |
|
? |
|
Eingangskapazit?t input capacitance |
f = 1 MHz, TY? = 25°C, V?? = 25 V, V?? = 0 V |
Cítù |
|
56,0 |
|
nF |
|
Rückwirkungskapazit?t reverse transfer capacitance |
f = 1 MHz, TY? = 25°C, V?? = 25 V, V?? = 0 V |
C?tù |
|
2,30 |
|
nF |
|
Kollektor-Emitter Reststrom collector-emitter cut-off current |
V?? = 1200 V, V?? = 0 V, TY? = 25°C |
I??? |
|
|
5,0 |
mA |
|
Gate-Emitter Reststrom gate-emitter leakage current |
V?? = 0 V, V?? = 20 V, TY? = 25°C |
I??? |
|
|
400 |
nA |
|
Einschaltverz?gerungszeit (ind. Last) turn-on delay time (inductive load) |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V TY? = 125°C R?óò = 3,6 ? |
tá óò |
|
0,24 0,25 |
|
μs μs |
|
Anstiegszeit (induktive Last) rise time (inductive load) |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V TY? = 125°C R?óò = 3,6 ? |
t? |
|
0,18 0,19 |
|
μs μs |
|
Abschaltverz?gerungszeit (ind. Last) turn-off delay time (inductive load) |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V TY? = 125°C R?ó?? = 0,91 ? |
tá ó?? |
|
0,79 0,80 |
|
μs μs |
|
Fallzeit (induktive Last) fall time (inductive load) |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V TY? = 125°C R?ó?? = 0,91 ? |
t? |
|
0,12 0,20 |
|
μs μs |
|
Einschaltverlustenergie pro Puls turn-on energy loss per pulse |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V, L? = 85 nH TY? = 125°C R?óò = 3,6 ? |
Eóò |
|
85,0 |
|
mJ mJ |
|
Abschaltverlustenergie pro Puls turn-off energy loss per pulse |
I? = 800 A, V?? = 600 V TY? = 25°C V?? = ±15 V, L? = 85 nH TY? = 125°C R?ó?? = 0,91 ? |
Eó?? |
|
125 |
|
mJ mJ |
|
Kurzschlu?verhalten SC data |
t? ù 10 μs, V?? ù 15 V TY? = 125°C, V?? = 900 V, V???èà = V??? -Lù?? ·di/dt |
I?? |
|
3200 |
|
A |
|
Innerer W?rmewiderstand thermal resistance, junction to case |
pro IGBT per IGBT |
Rúì?? |
|
|
0,035 |
K/W |
