產品概述
The IRFR120NTRPBF is a HEXFET? fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silICon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
Advanced process technology
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
應用
產品信息
晶體管極性: N溝道 電流, Id 連續: 9.4A 漏源電壓, Vds: 100V 在電阻RDS(上): 0.21ohm 電壓 @ Rds測量: 10V 閾值電壓 Vgs: 4V 功耗 Pd: 48W 晶體管封裝類型: TO-252AA 針腳數: 3引腳 工作溫度最高值: 175°C 產品范圍: - 汽車質量標準: - MSL: MSL 1 -無限制