產品概述
The IRL2910PBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silICon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
應用
產品信息
晶體管極性: N溝道 電流, Id 連續: 55A 漏源電壓, Vds: 100V 在電阻RDS(上): 0.026ohm 電壓 @ Rds測量: 10V 閾值電壓 Vgs: 2V 功耗 Pd: 200W 晶體管封裝類型: TO-220AB 針腳數: 3引腳 工作溫度最高值: 175°C