產品概述
The IRF530NSPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silICon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
應用
產品信息
晶體管極性: N溝道 電流, Id 連續: 17A 漏源電壓, Vds: 100V 在電阻RDS(上): 0.09ohm 電壓 @ Rds測量: 10V 閾值電壓 Vgs: 4V 功耗 Pd: 79W 晶體管封裝類型: TO-263 針腳數: 3引腳 工作溫度最高值: 175°C 產品范圍: - 汽車質量標準: - MSL: MSL 1 -無限制