TC58NVG1S3ETAI0  TC58NVG2S0FTA00 TC58NVG2S3ETA00 TC58NVG3S0FTA00

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096BLOCKs. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

TC58DVG3S0ETAI0  TC58DVM92A5TA00 TC58NVG0S3EBAI4  TC58NVG0S3ETA00 

TC58NVG0S3ETAI0  TC58NVG0S3HTA00 TC58NVG1S3EBAI5  TC58NVG1S3ETA00 

TC58NVG1S3ETAI0  TC58NVG2S0FTA00 TC58NVG2S3ETA00 TC58NVG3S0FTA00 

TC58NVG4D2HTA00 TC58NVG5D2HTA00 TC58NVG5T2HTA00 TC58NVG6D2GTA00 

TC58NVG6D2HTA00 TC58NVG6DCJTA00 TC58NVG6T2HTA00 TC58NVG7T2JTA00 

TC58TEG5T2JTA00 TC58TEG6D2HTA00 TC58TEG6DCJTA00 TC58TEG6T2JTA00

 TC58TEG7T2JTA00 TH58DVG5S0ETAK0  TH58DVG6S0ELASA  TH58NVG7D2GTA20 

 TH58NVG7D2GTA28  TH58NVG7D2HTA20  TH58NVG7DCJTA20  TH58NVG7T2HTA20  

TH58NVG8D2HTA20  TH58NVG8T2HTA20  TH58TEG7D2HBA4C  TH58TEG7D2HTA20 

 TH58TEG7E2HBA4C  TH58TEG8D2HBA8C  TH58TEG8D2HTA20  TH58TEG8E2HBA8C 

 TH58TEG9D2HBA89