HITTITE
HMC606LC5
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浩時健電子供應HMC606LC5寬波段、極低噪聲分布式MMIC放大器,適用于2~18GHz范圍內的軍事、航空、測試設備和光纖應用。HMC606、HMC606LC5為GaAs InGaPHBT MMIC分布式放大器,其典型小信號增益為13.5 dB,中波段下輸入和輸出回波損耗為20 dB。與基于FET的同類分布式放大器相比,這兩款放大器的相位噪聲性能有很大改進。當在輸入端加頻率為4 GHz的-1dBm信號時,HMC606和HMC606LC5的相位噪聲分別為-153 dBc/Hz@1 kHz和-157 dBc/Hz@1 kHz,偏移量為10 kHz;在輸入端加頻率為12 GHz的-2 dBm輸入信號,HMC606 和HMC606LC5的相位噪聲分別為-151@1 kHz和-160 dBc/Hz@1 kHz,偏移量為10 kHz。HMC606和HMC606LC5的中波段噪聲系數為4.5 dB、輸出P1dB/+15 dBm。因其所采用的偏置拓撲,僅從單個+5V 電源消耗6?mA電流。
HMC606和HMC606LC5適用于頻率合成器應用,也可與Hittite的一系列倍頻器和VCO產品協同架構高性能LO分布式和多用途鏈路。HMC606LC5采用5 x 5 mm陶瓷無引線表面貼著封裝,適用溫度等級為-40℃~+85℃。有適用于混合型MIC和MCM組件應用的HMC606 die(芯片),其適用溫度等級為-55℃ ~+85℃。
The HMC606LC5 is a GaAs InGaP HBT MMIC Distributed Amplifier housed in a leadless 5x5 mm suface mount package which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.
The HMC606LC5 provides 13.5 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606LC5 amplifiers I/Os are internally matched to 50 Ohms and are internally DC BLOCKed.
Features? Ultra Low Phase Noise:-160 dBc/Hz @ 10 kHz ? P1dB Output Power: +15 dBm ? Gain: 13.5 dB ? Output IP3: +27 dBm ? Supply Voltage: +5V @ 64mA ? 50 Ohm Matched Input/Output ? 25mm2 Leadless SMT Package |
Typical Applications? Radar, EW & ECM |
Functional Diagram![]() |
深圳浩時健電子長期供應Hittite的放大器、衰減器、鑒相器、分頻器、倍頻器、混頻器、調制器、模擬移相器、功率檢測器、射頻開關、壓控振蕩器VCO、PLOs和微波模塊在通信及工業應用領域的突出表現,為客戶在研發設計中提供更多相關型號:
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