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參數(shù)資料
| 型號： | PS11011 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | FLAT-BASE TYPE INSULATED TYPE |
| 中文描述： | 平性基地型絕緣型 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 406K |
| 代理商： | PS11011 |
MIMITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
ININSULATED TYPE
Jan. 2000
PS11011
INTEGRATED FUNCTIONS AND FEATURES
Converter bridge for 3 phase AC-to-DC power conversion.
Circuit for dynamic braking of motor regenerative energy.
3-phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technology.
Inverter output current capability I
O
(Note 1):
Type Name
PS11011
0.8A (rms)
APPLICATION
Acoustic noise-less 0.1kW/AC200V class 3 phase inverter and other motor control applica-
tions
PACKAGE OUTLINES
PS11011
FLFLAT-BASE TYPE
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
For inverter side upper-leg IGBTs :Drive circuit, High voltage isolated high-speed level shifting, Short circuit protection (SC).
Bootstrap circuit supply scheme (single drive power supply) and Under voltage protection (UV).
For inverter side lower-leg IGBTs : Drive circuit, Short circuit protection (SC).
Control supply circuit under- & over- voltage protection (OV/UV).
System over temperature protection (OT). Fault output signaling circuit (F
O
) and Current limit warn-
ing signal output (CL).
For Brake circuit IGBT : Drive circuit
Warning and Fault signaling :
F
O1
: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
F
O2
: N-side control supply abnormality locking (OV/UV).
F
O3
: System over-temperature protection (OT).
CL : Warning for inverter current overload condition
For system feedback control : Analogue signal feedback reproducing actual inverter output phase currents (3
φ
).
Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : I
OP
= I
O
×
√
2
(Fig. 1)
100% load
150% over load
1.2A (rms), 1min
1 CBU+
2 CBU–
3 CBV+
4 CBV–
5 CBW+
6 CBW–
7 GND
8 NC
9 VDH
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN
21 VN
22 WN
23 Br
31 R
32 S
33 T
34 P1
35 P2
36 N
37 B
38 U
39 V
40 W
2
±
0.3
54
±
0.5
0.5
±
0.03
0.8
0
0
0
0
62
±
1
2
±
2
±
8
±
7
±
1
±
5.08
±
0.3
9 = 45.72
±
0.8
4-R2
2-R4
0.5
2
2
4.14
4
0
4
2
0
8
8
1
(
5
6
2
24
4
4
12 3 4
5 6
7 8 9
101112131415161718192021 23
31
32
33
34
35
36
37
38
39
40
22
Terminals Assignment:
2-
φ
4
1.2
LABEL
3
8
8
8
Control Pin top
portion details
8
Main terminal top
portion details
0.3
±
0.5
0
12
0.6
0.35MAX
±
0.5
0
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|---|---|
| PS11012 | 功能描述:MOD IPM 3PHASE IGBT 600V 4A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11013 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11014 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11015 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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