- 您現在的位置：買賣IC網 > PDF目錄376268 > PSD834F2V-20 (意法半導體) Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V PDF資料下載
參數資料
| 型號： | PSD834F2V-20 |
| 廠商： | 意法半導體 |
| 英文描述： | Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V |
| 中文描述： | Flash在系統可編程（ISP）的周邊8位MCU，5V的 |
| 文件頁數： | 21/110頁 |
| 文件大小： | 1737K |
| 代理商： | PSD834F2V-20 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁
21/110
PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
Table 9. Instructions
Note: 1. All bus cycles are WRITE bus cycles, except the ones with the “READ” label
2. All values are in hexadecimal:
X = Don’t Care. Addresses of the form XXXXh, in this table, must be even addresses
RA = Address of the memory location to be read
RD = Data read from location RA during the READ cycle
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of Write Strobe (WR, CNTL0).
PA is an even address for PSD in word programming mode.
PD = Data word to be programmed at location PA. Data is latched on the rising edge of Write Strobe (WR, CNTL0)
SA = Address of the sector to be erased or verified. The Sector Select (FS0-FS7 or CSBOOT0-CSBOOT3) of the sector to be
erased, or verified, must be Active (High).
3. Sector Select (FS0 to FS7 or CSBOOT0 to CSBOOT3) signals are active High, and are defined in PSDsoft Express.
4. Only address bits A11-A0 are used in instruction decoding.
5. No Unlock or instruction cycles are required when the device is in the READ Mode
6. The Reset instruction is required to return to the READ Mode after reading the Flash ID, or after reading the Sector Protection Sta-
tus, or if the Error Flag Bit (DQ5/DQ13) goes High.
7. Additional sectors to be erased must be written at the end of the Sector Erase instruction within 80μs.
8. The data is 00h for an unprotected sector, and 01h for a protected sector. In the fourth cycle, the Sector Select is active, and
(A1,A0)=(1,0)
9. The Unlock Bypass instruction is required prior to the Unlock Bypass Program instruction.
10. The Unlock Bypass Reset Flash instruction is required to return to reading memory data when the device is in the Unlock Bypass
mode.
11. The system may perform READ and Program cycles in non-erasing sectors, read the Flash ID or read the Sector Protection Status
when in the Suspend Sector Erase mode. The Suspend Sector Erase instruction is valid only during a Sector Erase cycle.
12. The Resume Sector Erase instruction is valid only during the Suspend Sector Erase mode.
13. The MCU cannot invoke these instructions while executing code from the same Flash memory as that for which the instruction is
intended. The MCU must fetch, for example, the code from the secondary Flash memory when reading the Sector Protection Status
of the primary Flash memory.
Instruction
FS0-FS7 or
CSBOOT0-
CSBOOT3
Cycle 1
Cycle 2
Cycle 3
Cycle 4
Cycle 5
Cycle 6
Cycle 7
READ
5
1
“READ”
RD @ RA
Read Main
Flash ID
6
1
AAh@
X555h
55h@
XAAAh
90h@
X555h
Read identifier
(A6,A1,A0 = 0,0,1)
Read Sector
Protection
6,8,13
1
AAh@
X555h
55h@
XAAAh
90h@
X555h
Read identifier
(A6,A1,A0 = 0,1,0)
Program a
Flash Byte
13
1
AAh@
X555h
55h@
XAAAh
A0h@
X555h
PD@ PA
Flash Sector
Erase
7,13
1
AAh@
X555h
55h@
XAAAh
80h@
X555h
AAh@ X555h
55h@
XAAAh
30h@
SA
30h
7
@
next SA
Flash Bulk
Erase
13
1
AAh@
X555h
55h@
XAAAh
80h@
X555h
AAh@ X555h
55h@
XAAAh
10h@
X555h
Suspend
Sector Erase
11
1
B0h@
XXXXh
Resume
Sector Erase
12
1
30h@
XXXXh
Reset
6
1
F0h@
XXXXh
Unlock Bypass
1
AAh@
X555h
55h@
XAAAh
20h@
X555h
Unlock Bypass
Program
9
1
A0h@
XXXXh
PD@ PA
Unlock Bypass
Reset
10
1
90h@
XXXXh
00h@
XXXXh
相關PDF資料 |
PDF描述 |
|---|---|
| PSD834F2V-70 | High Speed Voltage Mode Pulse Width Modulator 8-PDIP -40 to 85 |
| PSD834F2V-90 | High Speed Voltage Mode Pulse Width Modulator 8-PDIP -40 to 85 |
| PSD834F3V-15 | High Speed Voltage Mode Pulse Width Modulator 8-SOIC -40 to 85 |
| PSD8532V20MT | Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
| PSD8532V70JT | Flash In-System Programmable ISP Peripherals For 8-bit MCUs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PSD834F2V-20JI | 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100 |
| PSD834F2V-20MI | 功能描述:SPLD - 簡單可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24 |
| PSD835G2-70U | 功能描述:靜態隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90U | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90UI | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發布緊急采購，3分鐘左右您將得到回復。