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參數資料
| 型號： | PSD834F2V-90 |
| 廠商： | 意法半導體 |
| 英文描述： | High Speed Voltage Mode Pulse Width Modulator 8-PDIP -40 to 85 |
| 中文描述： | Flash在系統可編程（ISP）的周邊8位MCU，5V的 |
| 文件頁數： | 30/110頁 |
| 文件大?。?/td> | 1737K |
| 代理商： | PSD834F2V-90 |
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PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
30/110
SECTOR SELECT AND SRAM SELECT
Sector Select (FS0-FS7, CSBOOT0-CSBOOT3)
and SRAM Select (RS0) are all outputs of the
DPLD. They are setup by writing equations for
them in PSDabel. The following rules apply to the
equations for these signals:
1.
Primary Flash memory and secondary Flash
memory Sector Select signals must
not
be
larger than the physical sector size.
2.
Any primary Flash memory sector must
not
be
mapped in the same memory space as
another Flash memory sector.
3.
A secondary Flash memory sector must
not
be
mapped in the same memory space as
another secondary Flash memory sector.
4.
SRAM, I/O, and Peripheral I/O spaces must
not
overlap.
5.
A secondary Flash memory sector
may
overlap a primary Flash memory sector. In
case of overlap, priority is given to the
secondary Flash memory sector.
6.
SRAM, I/O, and Peripheral I/O spaces
may
overlap any other memory sector. Priority is
given to the SRAM, I/O, or Peripheral I/O.
Example
FS0 is valid when the address is in the range of
8000h to BFFFh, CSBOOT0 is valid from 8000h to
9FFFh, and RS0 is valid from 8000h to 87FFh.
Any address in the range of RS0 always accesses
the SRAM. Any address in the range of CSBOOT0
greater than 87FFh (and less than 9FFFh) auto-
matically addresses secondary Flash memory
segment 0. Any address greater than 9FFFh ac-
cesses the primary Flash memory segment 0. You
can see that half of the primary Flash memory seg-
ment 0 and one-fourth of secondary Flash memory
segment 0 cannot be accessed in this example.
Also note that an equation that defined FS1 to any-
where in the range of 8000h to BFFFh would
not
be valid.
Figure
9
shows the priority levels for all memory
components. Any component on a higher level can
overlap and has priority over any component on a
lower level. Components on the same level must
not
overlap. Level one has the highest priority and
level 3 has the lowest.
Memory Select Configuration for MCUs with
Separate Program and Data Spaces
The 8031 and compatible family of MCUs, which
includes the 80C51, 80C151, 80C251, and
80C51XA, have separate address spaces for Pro-
gram memory (selected using Program Select En-
able (PSEN, CNTL2)) and Data memory (selected
using Read Strobe (RD, CNTL1)). Any of the
memories within the PSD can reside in either
space or both spaces.
This is controlled through manipulation of the VM
register that resides in the CSIOP space.
The VM register is set using PSDsoft Express to
have an initial value. It can subsequently be
changed by the MCU so that memory mapping
can be changed on-the-fly.
For example, you may wish to have SRAM and pri-
mary Flash memory in the Data space at Boot-up,
and secondary Flash memory in the Program
space at Boot-up, and later swap the primary and
secondary Flash memories. This is easily done
with the VM register by using PSDsoft Express
Configuration to configure it for Boot-up and hav-
ing the MCU change it when desired.
Table
13., page 31
describes the VM Register.
Figure 9. Priority Level of Memory and I/O
Components
Configuration Modes for MCUs with Separate
Program and Data Spaces
Separate Space Modes.
Program space is sep-
arated from Data space. For example, Program
Select Enable (PSEN, CNTL2) is used to access
the program code from the primary Flash memory,
while Read Strobe (RD, CNTL1) is used to access
data from the secondary Flash memory, SRAM
and I/O Port blocks. This configuration requires
the VM register to be set to 0Ch (see
Figure
10., page 31
).
Combined Space Modes.
The
Data spaces are combined into one memory
space that allows the primary Flash memory, sec-
ondary Flash memory, and SRAM to be accessed
by either Program Select Enable (PSEN, CNTL2)
or Read Strobe (RD, CNTL1). For example, to
configure the primary Flash memory in Combined
space, Bits b2 and b4 of the VM register are set to
'1' (see
Figure 11., page 31
).
Program
and
Level 1
SRAM, I/O, or
Peripheral I/O
Level 2
Secondary
Non-Volatile Memory
Highest Priority
Lowest Priority
Level 3
Primary Flash Memory
AI02867D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PSD835G2-70U | 功能描述:靜態隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90U | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90UI | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-12UI | 功能描述:靜態隨機存取存儲器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-90U | 功能描述:靜態隨機存取存儲器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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