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參數資料
| 型號： | PSD834F3V-15 |
| 廠商： | 意法半導體 |
| 英文描述： | High Speed Voltage Mode Pulse Width Modulator 8-SOIC -40 to 85 |
| 中文描述： | Flash在系統可編程（ISP）的周邊8位MCU，5V的 |
| 文件頁數： | 64/110頁 |
| 文件大小： | 1737K |
| 代理商： | PSD834F3V-15 |
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PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
64/110
For Users of the HC11 (or compatible)
The HC11 turns off its E clock when it sleeps.
Therefore, if you are using an HC11 (or compati-
ble) in your design, and you wish to use the Pow-
er-down mode, you must not connect the E clock
to CLKIN (PD1). You should instead connect a
crystal oscillator to CLKIN (PD1). The crystal oscil-
lator frequency must be
less than
15 times the fre-
quency of AS. The reason for this is that if the
frequency is greater than 15 times the frequency
of AS, the PSD keeps going into Power-down
mode.
Other Power Saving Options
The PSD offers other reduced power saving op-
tions that are independent of the Power-down
mode. Except for the SRAM Stand-by and PSD
Chip Select Input (CSI, PD2) features, they are en-
abled by setting bits in PMMR0 and PMMR2.
Figure 33. Enable Power-down Flow Chart
PLD Power Management
The power and speed of the PLDs are controlled
by the Turbo Bit (Bit 3) in PMMR0. By setting the
bit to '1,' the Turbo mode is off and the PLDs con-
sume the specified stand-by current when the in-
puts are not switching for an extended time of
70ns. The propagation delay time is increased by
10ns after the Turbo Bit is set to '1' (turned off)
when the inputs change at a composite frequency
of less than 15 MHz. When the Turbo Bit is reset
to '0' (turned on), the PLDs run at full power and
speed. The Turbo Bit affects the PLD’s DC power,
AC power, and propagation delay.
Blocking MCU control signals with the bits of
PMMR2 can further reduce PLD AC power con-
sumption.
SRAM Standby Mode (Battery Backup).
The
PSD supports a battery backup mode in which the
contents of the SRAM are retained in the event of
a power loss. The SRAM has Voltage Stand-by
(V
STBY
, PC2) that can be connected to an external
battery. When V
CC
becomes lower than V
STBY
then the PSD automatically connects to Voltage
Stand-by (V
STBY
, PC2) as a power source to the
SRAM. The SRAM Standby Current (I
STBY
) is typ-
ically 0.5μA. The SRAM data retention voltage is
2V minimum. The Battery-on Indicator (VBATON)
can be routed to PC4. This signal indicates when
the V
CC
has dropped below V
STBY
.
Enable APD
Set PMMR0 Bit 1 = 1
PSD in Power
Down Mode
ALE/AS idle
for 15 CLKIN
clocks
RESET
Yes
No
OPTIONAL
Disable desired inputs to PLD
by setting PMMR0 bits 4 and 5
and PMMR2 bits 2 through 6.
AI02892
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PSD835G2-70U | 功能描述:靜態隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90U | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2-90UI | 功能描述:靜態隨機存取存儲器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-12UI | 功能描述:靜態隨機存取存儲器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| PSD835G2V-90U | 功能描述:靜態隨機存取存儲器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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